Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasers emitting at 980nm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
2. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
3. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
4. Single transverse mode operation of long wavelength (~1.3 [micro sign]m) InAs GaAs quantum dot laser
5. High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
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1. Brief Review of Development and Techniques for High Power Semiconductor Lasers;Acta Optica Sinica;2021
2. Molecular Beam Epitaxy: An Overview;Reference Module in Materials Science and Materials Engineering;2016
3. InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm;Chinese Physics B;2012-02
4. Raman scattering in InAs/AlGaAs quantum dot nanostructures;Applied Physics Letters;2011-03-14
5. Molecular Beam Epitaxy: An Overview;Comprehensive Semiconductor Science and Technology;2011
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