Raman scattering in InAs/AlGaAs quantum dot nanostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3567024
Reference18 articles.
1. Temperature dependence of the optical properties ofInAs/AlyGa1−yAsself-organized quantum dots
2. Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasers emitting at 980nm
3. Quantum dot strain engineering of InAs∕InGaAs nanostructures
4. 1.59μm room temperature emission from metamorphic InAs∕InGaAs quantum dots grown on GaAs substrates
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lifetimes of confined optical phonons and the shape of a Raman peak in disordered nanoparticles. II. Numerical treatment;Physical Review B;2020-11-16
2. Raman study of InAs/GaAs quantum dot solar cells;Current Applied Physics;2019-10
3. Tuning of near infrared excitonic emission from InAs quantum dots by controlling the sub-monolayer coverage;Journal of Luminescence;2019-06
4. Effect of Al Ratio on Photoluminescence and Raman Scattering of InAlAs/AlGaAs Quantum Dots;Silicon;2018-09-26
5. 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs;Scripta Materialia;2015-07
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