A model for isotropic crystal growth from vapor on a patterned substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth
2. One-Step Grown Lateral p-n Junctions on GaAs (001) Patterned Substrates with (110) Sidewalls by Molecular Beam Epitaxy
3. Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD
4. D.A. French, J. Pelesko, R.J. Braun, Final Reports of the 15th Annual Workshop on Mathematical Problems in Industry, University of Delaware, 1999.
5. Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates
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