1. An Effective VLSI Design Performance Improvement in Computing Applications;Naveed;Journal of Critical Reviews,2020
2. Scaling carbon nanotube complementary transistors to 5-nm gate lengths;Qiu;Science,2017
3. “Field-effect transistors made from solution-grown two-dimensional tellurene”, Nature;Wang;Electronics,2018
4. Hetero-gate Dielectric with Hetero Dielectric BOX for Suppressing Ambipolar Current in Tunnel FETs;Pindoo,2020
5. Scaling challenges for advanced CMOS devices;Jacob;International Journal of High-Speed Electronics and Systems,2017