Robustness evaluation of electrical characteristics of sub-22 nm FinFETs affected by physical variability
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference42 articles.
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2. Kumar, J.N. Roy, A review of nanoscaled bulk double gate and triple gate FETs for low standby power application, 3rd International Conference on Trends in Electronics and Informatics (ICOEI), 709-716, 2019.
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5. A.A. Kumar, A. Chalil Performance analysis of 6T SRAM cell on planar and finfettechnology, International Conference on Communication and Signal Processing (ICCSP) 2019 0375 0379.
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