Growth and Characterization of Epitaxial In-plane SiGe Alloy Nanowires
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference25 articles.
1. Enhanced Thermoelectric Figure-of-Merit in Nanostructured p-type Silicon Germanium Bulk Alloys
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3. Self-integration of nanowires into circuits via guided growth
4. Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The model for in-plane and out-of-plane growth regimes of semiconductor nanowires;Journal of Physics: Conference Series;2019-12-01
2. Thermal transport in epitaxial Si1−xGexalloy nanowires with varying composition and morphology;Nanotechnology;2017-11-21
3. Spectroscopic imaging ellipsometry of self-assembled SiGe/Si nanostructures;Applied Surface Science;2017-11
4. Composition and Strain Imaging of Epitaxial In-Plane SiGe Alloy Nanowires by Micro-Raman Spectroscopy;The Journal of Physical Chemistry C;2015-09-16
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