Materials physics of GeSn-based semiconductor lasers
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference20 articles.
1. Ge-on-Si laser operating at room temperature
2. An electrically pumped germanium laser
3. Ge–Sn semiconductors for band-gap and lattice engineering
4. Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)
5. Ferromagnetic resonance linewidths in ultrathin structures: A theoretical study of spin pumping
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1. Impact of Carrier Momentum (k)-Space Separation on GeSn Infrared Photodetectors;IEEE Journal of Selected Topics in Quantum Electronics;2025-01
2. A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics;Journal of Applied Physics;2024-03-22
3. Synthesis of High Sn Content Ge1–x–ySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications;ACS Applied Materials & Interfaces;2023-10-06
4. Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge;Materials Science in Semiconductor Processing;2023-09
5. Theoretical investigation of the structural, electronic, optical, and elastic properties of the zinc blende SiGe1 − xSnx ternary alloy;Optical and Quantum Electronics;2023-07-05
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