Impact On Analog And Linearity Performance Of Nanoscale AlGaN/GaN HEMT With Variation In Surface Passivation Stack
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference14 articles.
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4. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior;Saito;IEEE Transactions on electron devices,2003
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2. TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer;Journal of Physics D: Applied Physics;2022-07-08
3. Comparison Of DC & RF Characteristics of AlGaN/GaN HEMT Using Different Surface Passivation Materials;2021 IEEE 2nd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC);2021-11-26
4. Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material;Defence Science Journal;2020-10-08
5. Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT;Journal of Materials Science: Materials in Electronics;2020-08-31
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