Author:
Chander Subhash,Singh Partap,Gupta Samuder,Rawal D. S.,Gupta Mridula
Abstract
In this paper effect of self-heating has been studied of AlGaN/GaN high electron mobility transistor (HEMT) for different passivation layers which is promising device for high power at high frequencies. The different passivation layers used are aluminium oxide (Al2O3), silicon nitride (SiN) and silicon dioxide (SiO2). The device GaN HEMT has been simulated and characterised for its thermal behaviour by the distribution of lattice temperature inside the device using device simulation tool ATLAS from SILVACO. The transfer and output characteristics with and without self-heating has been studied for electrical characterisation. The channel temperature for different passivation observed is 448 K, 456 K and 471 K forAl2O3, SiN and SiO2 respectively. The observed different temperatures are due to difference in their thermal conductivity. This channel temperature information is critical to study the reliability of the device at high power levels.
Publisher
Defence Scientific Information and Documentation Centre
Subject
Electrical and Electronic Engineering,Computer Science Applications,General Physics and Astronomy,Mechanical Engineering,Biomedical Engineering,General Chemical Engineering
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献