Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications-Reference-Cited by-同舟云学术

Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications

Published:2020-03 Issue: Volume:69 Page:104472
ISSN:2211-2855
Container-title:Nano Energy
language:en
Short-container-title:Nano Energy

Author:

Sun Linfeng,Hwang Genuwoo,Choi Wooseon,Han Gyeongtak,Zhang Yishu,Jiang Jinbao,Zheng Shoujun,Watanabe Kenji,Taniguchi Takashi,Zhao Mali,Zhao Rong,Kim Young-Min,Yang Heejun

Funder

Samsung

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Materials Science,Renewable Energy, Sustainability and the Environment

Reference40 articles.

1. Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

2. Memory and Information Processing in Neuromorphic Systems

3. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

4. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

5. Fully memristive neural networks for pattern classification with unsupervised learning

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