A new spectroscopic method for determination of energy distribution of interface states in the semiconductor band-gap-Reference-Cited by-同舟云学术

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A new spectroscopic method for determination of energy distribution of interface states in the semiconductor band-gap

Published:1995-12 Issue: Volume:76 Page:595-600
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Kobayashi Hikaru,Kubota Tomohiro,Namba Kenji,Nakato Yoshihiro,Nishioka Yatsushiro

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. New and unified model for Schottky barrier and III–V insulator interface states formation

2. The advanced unified defect model for Schottky barrier formation

3. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

4. Chemically Induced Charge Redistribution at Al-GaAs Interfaces

5. Correlation of Fermi‐level energy and chemistry at InP(100) interfaces

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