Raman and SIMS studies of rapid thermal annealing effect of silicon ion implanted GaAs-Reference-Cited by-同舟云学术

Raman and SIMS studies of rapid thermal annealing effect of silicon ion implanted GaAs

Published:2000-12 Issue:12 Volume:61 Page:1927-1933
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Dilawar N,Varandani D,Chakraborty B.R,Bandyopadhyay A.K

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference14 articles.

1. S. Sripad, S. Bhunia, D.N. Bose, K.C. Kumar, A.V.S.K. Rao, P.A. Govindacharulu, R.K. Khatri, B. Bhattacharya, G. Sai Saravanam, A.K. Bandyopadhyay, in: Vikram Kumar, S.K. Agarwal (Eds.), Physics of Semiconductor Devices, Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices, vol. 1, New Delhi, 1999, 287pp.

2. Transient Thermal Processing of GaAs

3. Self‐Compensation in Rapid Thermal Annealed Silicon‐Implanted Gallium Arsenide

4. Light Scattering Spectra of Solids;Mooradian,1969

5. LO-Phonon-plasmon modes in n-GaAs and n-InP under pressure

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