Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference19 articles.
1. Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+
2. Dopant incorporation in Si‐implanted and thermally annealed GaAs
3. Raman and SIMS studies of rapid thermal annealing effect of silicon ion implanted GaAs
4. Light Scattering in Solids IV;Abstreiter,1984
5. Channeling;Eisen,1973
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