Room temperature polarization bistability in 1.3 μm InGaAsP/InP ridge waveguide lasers-Reference-Cited by-同舟云学术

Room temperature polarization bistability in 1.3 μm InGaAsP/InP ridge waveguide lasers

Published:1991-01 Issue:3-4 Volume:80 Page:259-261
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Rheinländer B.,Klehr A.,Ziemann O.,Gottschalch V.,Oelgart G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Optical polarization bistability with high switching speed in a TM wave injected buried heterostructure laser

2. Switching mechanism in polarization-bistable semiconductor lasers

3. The inhibition mechanism in polarization bistable semiconductor lasers

4. Optically triggered polarisation bistability in GaInAsP twin stripe injection lasers using integrated devices

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