Optical polarization bistability with high switching speed in a TM wave injected buried heterostructure laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98314
Reference8 articles.
1. Digital optical signal processing with polarization-bistable semiconductor lasers
2. Optical input and output characteristics for bistable semiconductor lasers
3. Invited paper A tentative assessment of semiconductor laser optical bistability
4. Operation principle of the InGaAsP/InP laser transistor
5. Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors
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1. Analytical stability boundaries of an injected two-polarization semiconductor laser;Physical Review E;2015-04-30
2. Stokes parameters of the radiation of transverse-single-mode InGaAs/AlGaAs lasers with a quantum-well active region;Quantum Electronics;2011-01-31
3. Bistable polarization switching in transverse magnetic wave-injected semiconductor lasers by mode hopping;Electronics and Communications in Japan (Part II: Electronics);1996
4. Analysis of polarization bistability of phase-shifted DFB laser due to TM light injection;Journal of Lightwave Technology;1992-07
5. Frequency response of an MQW DFB laser injected with intensity-modulated TM-polarized light;IEEE Photonics Technology Letters;1991-03
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