Three-dimensional impurity profiling using chemical etching and scanning tunneling microscopy
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
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1. Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
2. Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tips;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05
3. Cross-sectional scanning tunneling and scanning force microscopy of amorphous hydrogenated silicon pn-doping superlattices in nitrogen and in air;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-07
4. Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices;Superlattices and Microstructures;1994-01
5. Compound Semiconductor Ultrathin Films? characterization and control of growth;Advanced Materials;1993-03
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