High-resolution transmission electron microscopy investigation of interfaces in metal-silicon systems-Reference-Cited by-同舟云学术

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High-resolution transmission electron microscopy investigation of interfaces in metal-silicon systems

Published:1994-06 Issue:2-4 Volume:54 Page:156-165
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Chen L.J.,Liang J.M.,Liu C.S.,Hsieh W.Y.,Lin J.H.,Lee T.L.,Wang M.H.,Chen W.J.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Epitaxial growth of Cu thin films on atomically cleaned (111)Si at room temperature

2. Interfacial reactions of ultrahigh‐vacuum‐deposited Cu thin films on atomically cleaned (111)Si. I. Phase formation and interface structure

3. Effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2in sputtered Ti films on (001)Si by rapid thermal annealing

4. Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin‐film and single‐crystal silicon

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1. Practical production of heteroatom-bridged and mixed amorphous–crystalline silicon for stable and fast-charging batteries;Journal of Materials Chemistry A;2023

2. Spreading Resistance Modeling for Contact Resistivity Extraction in Ohmic Multilayer Structures With Circular Electrodes;IEEE Transactions on Electron Devices;2021-12

3. Effect of heat treatment on the diffusion intermixing and structure of the Cu thin ﬁlm on Si (111) substrate: a molecular dynamics simulation study;Molecular Simulation;2021-09-14

4. Nucleation and growth of epitaxial silicide in silicon nanowires;Materials Science and Engineering: R: Reports;2010-11

5. Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano-NiSi∕Si;Applied Physics Letters;2007-06-18

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