Electron diffraction in porous silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Application of high voltage electron microscopy to low-temperature radiation damage studies in metals
2. Electron diffraction in crystalline specimens containing a high density of lattice defects. II. Numerical evaluation for the case of narrow dislocation dipoles–comparison with experimetnal data
3. Electron diffraction in crystalline specimens containing a high density of lattice defects. I. Development of a statistical theory
4. Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution
5. Microscopy of Semiconducting Materials 1983;Baumgart,1983
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1. Control of the Morphology of Si Nanostructure Using Single-Step Metal Assisted Etching Method;ECS Transactions;2013-04-01
2. AgNO$_{3}$-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method;Japanese Journal of Applied Physics;2012-11-20
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4. Surface and optical properties of porous silicon;Journal of Materials Research;1996-02
5. The Surface Chemistry of Silicon in Fluoride Electrolytes;Advances in Electrochemical Sciences and Engineering;1995-06-29
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