Lower limit of detectability at high spatial resolution of As implanted into Si using the Jeol 200CX in the STEM-EDX mode-Reference-Cited by-同舟云学术

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Lower limit of detectability at high spatial resolution of As implanted into Si using the Jeol 200CX in the STEM-EDX mode

Published:1988-01 Issue:1 Volume:24 Page:37-43
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Renteln P.,Ast D.G.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Proc. 37th Annual EMSA Meeting;Hall,1979

2. Proc. 41st Annual EMSA Meeting;Garrett-Reed,1983

3. Resolving composition variations at interfaces by STEM

4. Microbeam Analysis;Lyman,1986

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of size and density controlled GaAs/InxGa1−xAs/GaAs (x=0.10) nanowires on anodic alumina membrane-assisted etching of nanopatterned GaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11

2. Methods for the measurement of two-dimensional doping profiles;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-01

3. Einführung in die mikrostrukturellen und mikroanalytischen Verfahren der Werkstoff-Forschung;Materialwissenschaft und Werkstofftechnik;1990-02

4. STEM‐EDX Dopant Profiling of S‐D Implants in Submicron FETs;Journal of The Electrochemical Society;1989-12-01

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