MeV He backscattering analysis of ion-implanted Si: Drive-in diffusion and epitaxial regrowth-Reference-Cited by-同舟云学术

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MeV He backscattering analysis of ion-implanted Si: Drive-in diffusion and epitaxial regrowth

Published:1976-03 Issue:2 Volume:32 Page:303-306
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mayer J.W.,Csepregi L.,Gyulai J.,Nagy T.,Mezey G.,Revesz P.,Kotai E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Ion Implantation in Semiconductors and Other Materials,1973

2. Applications of Ion Beams to Metals,1974

3. Principles and applications of ion beam techniques for the analysis of solids and thin films

4. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-dose Ge+ implantation into silicon at elevated substrate temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

2. Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation;Applied Physics Letters;1989-01-02

3. EXPERIMENTAL ANNEALING AND ACTIVATION;Ion Implantation Science and Technology;1988

4. DAMAGE ANNEALING IN SILICON AND ELECTRICAL ACTIVITY;Ion Implantation Science and Technology;1984

5. Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface;Journal of Applied Physics;1983-06

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