Contribution à l'étude des pièges dans Ta2O5 thermique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Solid State Properties of Some Valve Metal Oxides
2. Structural systematics in the binary system Ta2O5–WO3. V. The structure of the low-temperature form of tantalum oxide L-Ta2O5
3. Thermal Oxidation of Sputtered Tantalum Thin Films between 100° and 525°C
4. Photoconduction and trapping in sputtered tantalum oxide films
5. Electrical Properties of Anodic Oxide Films of Ta, Nb, Zr, Ti, W, and V Formed by the Ion-Cathode Method
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Efficient Detection of Oxygen Vacancy Double Donors in Capacitors with Ultra-thin Ta2O5 Films for DRAM Applications by Zero-bias Thermally Stimulated Current Spectroscopy;MRS Proceedings;2005
2. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications;Materials Science and Engineering: R: Reports;1998-05
3. Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy;Applied Physics Letters;1997-07-28
4. Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very-High-Density Dynamic Random Access Memory (DRAM) Applications;Japanese Journal of Applied Physics;1995-02-28
5. Electrical properties of amorphous tantalum pentoxide thin films on silicon;Journal of Applied Physics;1983-11
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