Study of the material properties and suitability of plasma-deposited fluorine-doped silicon dioxides for low dielectric constant interlevel dielectrics-Reference-Cited by-同舟云学术

Study of the material properties and suitability of plasma-deposited fluorine-doped silicon dioxides for low dielectric constant interlevel dielectrics

Published:1995-12 Issue:1-2 Volume:270 Page:498-502
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Shannon V.L.,Karim M.Z.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

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4. Proc. Dielectrics for VLSI/ULS1 Multilevel Interconnection Conf.;Fukada,1995

5. Proc. Dielectrics for VLSI/ULSI Multilevel Interconnection Conf.;Quian,1995

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