Plasma-enhanced chemical vapour deposition of amorphous silicon nitride for thin film diode active matrix liquid crystal displays-Reference-Cited by-同舟云学术

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Plasma-enhanced chemical vapour deposition of amorphous silicon nitride for thin film diode active matrix liquid crystal displays

Published:1994-04 Issue:1-2 Volume:241 Page:287-290
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Oversluizen G.,Lodders W.H.M.,French I.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Thesis;Kuijk,1993

2. Materials Research Society, Spring Meet.;Shannon,1993

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. PECVD: Silicon Nitride;Encyclopedia of Plasma Technology;2016-12-12

2. Hot-electron degradation in hydrogenated amorphous-silicon-nitride thin-film diodes;Journal of Applied Physics;2001-05-15

3. Optimization of plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon;Journal of Applied Physics;1998-06-15

4. Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-05

5. High stability amorphous-silicon–nitride thin-film diode ring switch;Applied Physics Letters;1998-01-05

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