Calculation of semiconductor band bending due to a superficial zone including electronic states: Application to Schottky diodes-Reference-Cited by-同舟云学术

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Calculation of semiconductor band bending due to a superficial zone including electronic states: Application to Schottky diodes

Published:1990-10 Issue:1 Volume:191 Page:21-30
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Palau J.M.,Dumas M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Surface States and Rectification at a Metal Semi-Conductor Contact

2. New and unified model for Schottky barrier and III–V insulator interface states formation

3. Unified defect model and beyond

4. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

5. The advanced unified defect model for Schottky barrier formation

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1. Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n⁺-GaN Schottky contacts;Semiconductor Science and Technology;2022-08-19

2. http://journal-spqeo.org.ua;Semiconductor Physics Quantum Electronics and Optoelectronics;2018-03-29

3. On a New Mechanism for the Realization of Ohmic Contacts;Semiconductors;2018-01

4. A model of the intimate metal-semiconductor Schottky-barrier contact;Russian Physics Journal;2005-10

5. Properties of noble-metal/silicon junctions;Materials Science Reports;1992-06

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