Generation and annihilation of thermal donors in silicon thin films formed by oxygen implantation-Reference-Cited by-同舟云学术

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Generation and annihilation of thermal donors in silicon thin films formed by oxygen implantation

Published:1990-05 Issue:1 Volume:187 Page:187-198
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Vettese F.,Sicart J.,Robert J.L.,Cristoloveanu S.,Margail J.,Jaussaud C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. A study of silicon oxides prepared by oxygen implantation into silicon

2. Silicon-on-insulator by oxygen ion implantation

3. Microstructure of silicon implanted with high dose oxygen ions

4. Thermal donor and new donor generation in SOI material formed by oxygen implantation

5. Some characteristic properties of thermal donor formation in oxygen-containing silicon at 450 °C

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of the Electrical Properties of SIMOX Substrates and Their Impact on Device Performance;Journal of The Electrochemical Society;1991-10-01

2. Oxygen-related activity and other specific electrical properties of SIMOX;Vacuum;1991-01

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