What can molecular beam epitaxy do for silicon devices?
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Doping of silicon in MBE systems by solid phase epitaxy;Streit;Appl. Phys. Lett.,1984
2. Dopant incorporation studies in silicon molecular beam epitaxy;Allen;Appl. Surf. Sci.,1982
3. Evaporative antimony doping of silicon during molecular beam epitaxial growth;Metzger;J. Appl. Phys.,1984
4. Silicon triangular barrier diodes by MBE using solid phase epitaxial regrowth;Streit;IEEE Electron Device Lett.,1984
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Symmetry and stability of solitary dimer rows on Si(100);Physical Review Letters;1993-04-26
2. Present status of solid phase epitaxy of vacuum-deposited silicon;Journal of Crystal Growth;1989-11
3. The kinetics of fast steps on crystal surfaces and its application to the molecular beam epitaxy of silicon;IBM Journal of Research and Development;1988-11
4. Secondary ion mass spectrometry of hyper‐abrupt doping transitions fabricated by limited reaction processing;Applied Physics Letters;1987-06
5. SILICON MOLECULAR-BEAM EPITAXY;Epitaxial Silicon Technology;1986
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