Silicon triangular barrier diodes by MBE using solid-phase epitaxial regrowth-Reference-Cited by-同舟云学术

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Silicon triangular barrier diodes by MBE using solid-phase epitaxial regrowth

Published:1984-07 Issue:7 Volume:5 Page:254-256
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Streit D.C.,Allen F.G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31916/01484284.pdf?arnumber=1484284

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process;Applied Physics Express;2023-12-01

2. MBE-grown vertical silicon MOSFETs with sub-0.3 μm channel lengths;Journal of Crystal Growth;1993-02

3. Delta doping in silicon;Critical Reviews in Solid State and Materials Sciences;1993-01

4. Present status of solid phase epitaxy of vacuum-deposited silicon;Journal of Crystal Growth;1989-11

5. A new form of regenerative switching device-the camel switch;IEEE Transactions on Electron Devices;1988-11

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