Characterization of the spatial distribution of traps in Si3N4 by field-assisted discharge of metal-nitride-oxide-semiconductor devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference27 articles.
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3. EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING
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