Compound formation kinetics in the Si/Pd and Ge/Pd systems-Reference-Cited by-同舟云学术

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Compound formation kinetics in the Si/Pd and Ge/Pd systems

Published:1981-03 Issue:4 Volume:77 Page:319-330
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Nava F.,Majni G.,Ottaviani G.,Galli E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Thin Films—Reactions and Diffusions, Silicide Formation;Tu,1978

2. Review of binary alloy formation by thin film interactions

3. Silicide formation at low temperatures by metal-SiO2 interaction

4. Application of Ion Beams to Metals;Krautle,1974

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. PdGe contact fabrication on Se-doped Ge;Scripta Materialia;2017-10

2. Room temperature interactions in Pd-metal thin film couples;Materials Chemistry and Physics;1997-02

3. Interfacial processes in the Pd/a-Ge:H system;Applied Surface Science;1993-06

4. Effects of implanted hydrogen on Pd2Si formation;Applied Physics Letters;1985-10-15

5. Lateral growth of platinum and palladium silicides on an SiO2 layer;Thin Solid Films;1985-03

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