Characterization of reactively r.f.-sputtered tantalum oxide films-Reference-Cited by-同舟云学术

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Characterization of reactively r.f.-sputtered tantalum oxide films

Published:1988-08 Issue: Volume:162 Page:325-331
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Tu Yuan-Kuang,Lin Chia-Chien,Wang Way-Seen,Huang Sheng-Liang

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Thin Film Technology;Berry,1968

2. Tantalum Thin Films;Westwood,1975

3. Effects of deposition parameters on optical loss for rf‐sputtered Ta2O5 and Si3N4 waveguides

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compositional and Deposition Rate Dependence upon RF Substrate Bias of RF Sputtered Ni-Fe Films;Advanced Materials Research;2012-03

2. Properties and Characterization of Dielectric Thin Films;Schott Series on Glass and Glass Ceramics;2003

3. Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals;Journal of Applied Physics;1998-08

4. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications;Materials Science and Engineering: R: Reports;1998-05

5. Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygen;Thin Solid Films;1996-08

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