Electronic structure of silicide-silicon interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference51 articles.
1. Electronic states and microstructure at the silicide-silicon interface
2. Thin Films—Interdiffusion and Reactions;Tu,1978
3. Refractory silicides for integrated circuits
4. 1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspective
5. Physics of Semiconductor Devices;Sze,1969
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