Surface photo-absorption study of the laser-assisted atomic layer epitaxial growth process of GaAs-Reference-Cited by-同舟云学术

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Surface photo-absorption study of the laser-assisted atomic layer epitaxial growth process of GaAs

Published:1993-03 Issue:1-2 Volume:225 Page:40-46
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Simko J.P.,Meguro T.,Iwai S.,Ozasa K.,Aoyagi Y.,Sugano T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Monolayer growth and direct writing of GaAs by pulsed laser metalorganic vapor phase epitaxy

2. Mechanism of surface reaction in GaAs layer growth

3. Self‐limiting mechanism in the atomic layer epitaxy of GaAs

4. New approach to the atomic layer epitaxy of GaAs using a fast gas stream

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on work function and corresponding electron emission during NEA activation of GaAs surfaces;Applied Surface Science;2020-05

2. Preparation of Ga-terminated negative electron affinity-GaAs (100) surface by HCl-isopropanol treatment for nanoanalysis by scanning tunneling microscopy;Journal of Vacuum Science & Technology B;2018-11

3. STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O₂;IEICE Transactions on Electronics;2016

4. In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption;Japanese Journal of Applied Physics;2013-06-01

5. In SituStudies on Reaction Mechanisms in Atomic Layer Deposition;Critical Reviews in Solid State and Materials Sciences;2013-01

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