Dielectric properties of films prepared by the reactive sputtering of Ta In mixtures-Reference-Cited by-同舟云学术

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Dielectric properties of films prepared by the reactive sputtering of Ta In mixtures

Published:1975-12 Issue:2 Volume:30 Page:377-381
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ingrey S.J.,Westwood W.D.,MacLaurin B.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Thin Film Technology;Berry,1968

2. A NEW STRUCTURE IN TANTALUM THIN FILMS

3. Proc. Electronic Components Conf.;Smith,1962

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Properties of Al2 O 3 ‐ Ta2 O 5 Composite Dielectric Thin Films Prepared by RF Reactive Sputtering;Journal of The Electrochemical Society;1987-04-01

2. Glow Discharge Sputter Deposition;Thin Film Processes;1978

3. Effects of substrate position and angle of incidence on the refractive index of sputtered, birefringent Ta2O5Nx films;Journal of Vacuum Science and Technology;1977-01

4. Birefringent waveguides in thermally oxidized nitrogen-doped sputtered tantalum films;Thin Solid Films;1976-06

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