Atomistic simulations of amorphization processes in ion-implanted Si: roles of defects during amorphization, relaxation, and crystallization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference44 articles.
1. Mechanisms of amorphization in ion implanted crystalline silicon
2. Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition
3. Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon
4. Model for amorphization processes in ion-implanted Si
5. Structural model for amorphous silicon and germanium
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