Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Published:1991-12 Issue:1-2 Volume:206 Page:288-293
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Alterovitz S.A.,Sieg R.M.,Yao H.D.,Snyder P.G.,Woollam J.A.,Pamulapati J.,Bhattacharya P.K.,Sekula-Moise P.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters

2. Proc. Int. Electron Devices Meet. (IEDM);Masselnik,1985

3. Theoretical and experimental studies of optical absorption in strained quantum-well structures for optical modulators

4. Variable angle of incidence spectroscopic ellipsometry: Application to GaAs‐AlxGa1−xAs multiple heterostructures

5. High-field drift velocity of electrons in silicon inversion layers

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarized Terahertz Waves Emitted from In_0.2Ga_0.8As Nanowires;Journal of Nanoscience and Nanotechnology;2015-08-01

2. Neural-net computing for interpretation of semiconductor film optical ellipsometry parameters;IEEE Transactions on Neural Networks;1996-07

3. Ellipsometric Analysis of Strained InGa_xAs_1-x/GaAs Quantum Well Structures;Denki Kagaku oyobi Kogyo Butsuri Kagaku;1995-06-05

4. Modeling of InGaAs optical constants and its application to spectroscopic ellipsometry study of strained InGaAs/AlGaAs based structures;MRS Proceedings;1994

5. Characterization of SixGe1−x/Si heterostructures for device applications using spectroscopic ellipsometry;Journal of Applied Physics;1993-07

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