Characterization of SixGe1−x/Si heterostructures for device applications using spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355271
Reference29 articles.
1. Silicon-based semiconductor heterostructures: column IV bandgap engineering
2. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
3. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
4. Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
5. Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance
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1. Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry;Thin Solid Films;2006-08
2. Spectroscopic ellipsometry for in-line process control of SiGe:C HBT technology;Materials Science in Semiconductor Processing;2005-02
3. Spectroscopic ellipsometry of SixGe1−x/Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry;Thin Solid Films;2000-09
4. Refined model for spectroscopic ellipsometry analysis of SixGe1−x/Si strained heterostructures;Applied Physics Letters;2000-04-10
5. Interface characterization of Si[sub 3]N[sub 4]/Si/GaAs heterostructures after high temperature annealing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-11
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