Electronic characterization of compound semiconductor surfaces and interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference78 articles.
1. Observation of Acoustic Signals from Semiconductor Lasers
2. Electron escape depths in germanium
3. Electron mean free paths in ge in the range 70–1400 eV
4. Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP
5. Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)
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2. Remarkable stability of unmodified GaAs photocathodes during hydrogen evolution in acidic electrolyte;Journal of Materials Chemistry A;2016
3. ErAs epitaxial Ohmic contacts to InGaAs/InP;Applied Physics Letters;2009-02-23
4. Ultralow resistance in situ Ohmic contacts to InGaAs/InP;Applied Physics Letters;2008-11-03
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