Über den einfluβ der ionenimplantation auf die geschwindigkeit der anodischen siliziumoxydation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Die abtragung dünner schichten von P- und B-implantiertem Silizium mit Hilfe der anodischen Oxydation
2. Improved homogeneity of oxide layers anodically grown on high resistivity n-Si
3. An O18 Study of the Source of Oxygen in the Anodic Oxidation of Silicon and Tantalum in Some Organic Solvents
4. Anodic Oxidation of Silicon in Organic Baths Containing Fluorine
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Localized anodic oxide films on Si: preparation and properties;Electrochimica Acta;1994-06
2. The effects of ion implantation on the anodic oxidation of silicon;Physics Letters A;1985-05
3. The effects of arsenic implantation on the anodic oxidation of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-05
4. The effects of phosphorus implantation on the anodic oxidation of silicon;Radiation Effects;1984-01
5. The radiation damage in high-dose argon-implanted silicon;Radiation Effects;1983-01
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