Photoluminescence des couches minces ZnSe/GaAs obtenues par transport avec H2-Reference-Cited by-同舟云学术

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Photoluminescence des couches minces ZnSe/GaAs obtenues par transport avec H2

Published:1976-07 Issue:3 Volume:35 Page:363-371
ISSN:0040-6090
Container-title:Thin Solid Films
language:fr
Short-container-title:Thin Solid Films

Author:

Etienne D.,Bougnot G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Vapor‐Phase Growth of Single Crystals of II–VI Compounds

2. Croissance epitaxiale du seleniure de zinc sur l'arseniure de gallium

3. Hetero-epitaxy of ZnSe on GaAs by hydrogen transport

4. He´te´ro-e´pitaxie de ZnSe sur GaAs par transport en tube ouvert

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Liquid phase epitaxy and vapour phase epitaxy of the widegap zinc chalcogenides;Widegap II–VI Compounds for Opto-electronic Applications;1992

2. References;Thin Films by Chemical Vapour Deposition;1990

3. VPE ZnSe on GaAs: Photoluminescence and conductivity;Journal of Crystal Growth;1982-10

4. Photoluminescence of epitaxial films of ZnSe on GaAs;Soviet Physics Journal;1982-07

5. Crystal defects in Cd1-xZnxS/GaAs heterostructures prepared by vapour phase chemical transport;Journal of Crystal Growth;1981-02

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