VPE ZnSe on GaAs: Photoluminescence and conductivity
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. II–VI compounds in solar energy conversion
2. Vapor-Phase Epitaxial Growth and Some Properties of ZnSe, ZnS, and CdS
3. Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVD
4. The application of Auger depth profiling to metal-semiconductor contacts
5. Transport kinetics in horizontal ZnS epitaxial growth systems
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Vapor-phase epitaxial lateral overgrowth of ZnSe on GaAs;Journal of Crystal Growth;2000-04
2. Liquid phase epitaxy and vapour phase epitaxy of the widegap zinc chalcogenides;Widegap II–VI Compounds for Opto-electronic Applications;1992
3. Vapor Phase Homo- and Heteroepitaxies of ZnSe Films;Japanese Journal of Applied Physics;1991-12-01
4. The effect of growth time and thickness on the electrical properties of ZnSe epilayers on GaAs substrates;Thin Solid Films;1989-12
5. Effects of growth and annealing conditions on deep level emissions in CVD poly-ZnSe layers;Physica Status Solidi (a);1988-11-16
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