The effect of diluent gas and rapid thermal annealing on the properties of plasma-deposited silicon nitride films-Reference-Cited by-同舟云学术

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The effect of diluent gas and rapid thermal annealing on the properties of plasma-deposited silicon nitride films

Published:1992-03 Issue:2 Volume:209 Page:215-222
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Nam Chul Woo,Woo Seong Ihl,Kim Yong Tae,Min Suk-Ki

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Proc. 6th Int. IEEE VLSI Multilevel Interconnection Conf.;Pennington,1989

2. Plasma Deposited Thin Films;Adams,1986

3. Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation

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