Low temperature liquid phase epitaxial growth and characterization of AlxGa1−xAs

Author:

Chakravarty S.,Arora B.M.,Srivastava A.K.,Subramanian S.,Anand S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt;Scientific Reports;2024-01-16

2. Characterization of a liquid-phase-epitaxy-grown Al0.2Ga0.8As film on a GaAs (111) substrate by RBS, channeling and PIGE analyses;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04

3. Deep‐level transient charge spectroscopy of Sn donors in AlxGa1−xAs;Journal of Applied Physics;1993-02-15

4. Growth of III–V compounds by liquid phase epitaxy;Bulletin of Materials Science;1990-03

5. Deep‐level admittance spectroscopy ofDXcenters in AlGaAs:Sn;Journal of Applied Physics;1989-10-15

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