The production of tantalum nitride film resistors using a continuous sputtering machine-Reference-Cited by-同舟云学术

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The production of tantalum nitride film resistors using a continuous sputtering machine

Published:1979-03 Issue:2 Volume:57 Page:327-331
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Abdin Samir,Val Christian

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. The production of tantalum nitride resistive coatings by means of cathodic sputtering;Kaiser;Vacuum Congress,1977

2. Trans. 10th Natl Vacuum Symp.;Schuetze,1964

3. Thin Film Technology;Berry,1968

4. Properties of tantalum sputtered films;Gerstenberg,1962

5. Tantalum Thin Films;Westwood,1975

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure and mechanical properties of sputter deposited tantalum nitride thin films after high temperature loading;Thin Solid Films;2017-05

2. Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering;Microsystem Technologies;2010-01-08

3. A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition;Solid State Communications;2004-08

4. Study of phase transition and electrical resistivity of tantalum nitride films prepared by DC magnetron sputtering with OES detection system;Thin Solid Films;2001-11

5. Heteroepitaxial growth of TaN on MgO(001) and TiN(001)/Si(001) by pulsed laser deposition;MRS Proceedings;2001

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