Picosecond decay of photoinduced absorption in undoped amorphous and polycrystalline silicon thin films-Reference-Cited by-同舟云学术

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Picosecond decay of photoinduced absorption in undoped amorphous and polycrystalline silicon thin films

Published:1995-07 Issue:1 Volume:263 Page:99-104
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kubinyi M.,Grofcsik A.,Jones W.J.,Dyer T.E.,Marshall J.M.,Hepburn A.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Picosecond transient optical phenomena in a-Si:H

2. Trapping time in processed polycrystalline silicon measured by picosecond time‐resolved reflectivity

3. Effect of substrate temperature on recrystallization of plasma chemical vapor deposition amorphous silicon films

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1. The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering;Journal of Materials Science: Materials in Electronics;2016-09-19

2. Use of Amorphous Silicon for Active Photonic Devices;IEEE Transactions on Electron Devices;2013-05

3. Computer-assisted study of carrier thermalization by hopping in disordered semiconductors;Journal of Materials Science: Materials in Electronics;2003

4. Ultrafast carrier dynamics in wide gap amorphous silicon;Journal of Non-Crystalline Solids;1998-09

5. Laser spectroscopic study of photoinduced picosecond processes in amorphous and polycrystalline silicon films;Journal of Molecular Structure;1997-06

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