Approaches to understanding MBE growth phenomena-Reference-Cited by-同舟云学术

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Approaches to understanding MBE growth phenomena

Published:1995-10 Issue:1-2 Volume:267 Page:1-14
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Herman Marian A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference69 articles.

1. Molecular Beam Epitaxy—Fundamentals and Current Status;Herman,1996

2. Near surface transition layer model of MBE growth

3. Quasi-gas transition layers occurring in MBE growth of microdevices and superlattices

4. Condensation kinetics and mechanisms;Schmidt,1978

5. Materials Fundamentals of Molecular Beam Epitaxy;Tsao,1993

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mass-spectrometric study of tellurium-film condensation and evaporation on sapphire;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2014-03

2. MBE Growth of Mercury Cadmium Telluride;Mercury Cadmium Telluride;2010-09-04

3. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010

4. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process;Journal of Applied Physics;2005-06-15

5. Molecular Beam Epitaxy;Epitaxy;2004

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