Metal-organic chemical vapour codeposition of GaAs and SixC1−x groups: Growth of a new amorphous semiconductor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Raman scattering analysis of disorder in heterogeneous (GaAs)1−x(SiC2:H)x films grown by metal-organic chemical vapour deposition;Thin Solid Films;1987-12
2. A.c. properties of polycrystalline GaAs and (GaAs)1−x(SiC2:H)x grown by metal-organic chemical vapour deposition;Thin Solid Films;1987-02
3. Structural characterizations of MOCVD (GaAs)1−x(SiC2H)x films: Evidence for a multiphase structure;Materials Letters;1986-07
4. Optical and electrical properties of the disordered composite semiconductor (GaAs)1−x (SiC2 : H)x, grown by metal-organic chemical vapour deposition;Philosophical Magazine B;1986-05
5. Amorphous silicon bibliography 1984 update introduction;Solar Cells;1985-08
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