Optical and electrical properties of the disordered composite semiconductor (GaAs)1−x (SiC2 : H)x, grown by metal-organic chemical vapour deposition-Reference-Cited by-同舟云学术

Optical and electrical properties of the disordered composite semiconductor (GaAs)1−x (SiC2 : H)x, grown by metal-organic chemical vapour deposition

Published:1986-05 Issue:5 Volume:53 Page:445-457
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Maury F.¹,Constant G.¹,Jousse D.²,Deneuville A.²

Affiliation:

1. a Laboratoire de Cristallochimie , Réactivité et Protection des Matériaux, Unité Associée au CNRS 445 , ENSCT 118 route de Narbonne, 31077 , Toulouse Cédex , France

2. b Laboratoire d'Etudes des Propriétés Electroniques des Solides, associé à l'Université Scientifique et Médicale de Grenoble, CNRS , BP 166, 38042 , Grenoble Cédex , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818608240658

Reference25 articles.

1. Retarding crystallization of CVD amorphous silicon by alloying

2. INFLUENCE DE L'HYDROGENE SUR LES PROPRIÉTÉS OPTIQUES DU SILICIUM AMORPHE

3. Electronic and optical properties of glow-discharge amorphous silicon-carbon alloys

4. Properties of inhomogeneous amorphous and polycrystalline semiconductor films

5. Constant , G. and Morancho , R. Proceedings of the Fourth Conference on Chemical Vapour Deposition. Eindhoven. Edited by: Bloem , J. Verspui , G. and Wolff , L. R. pp.36

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical properties of amorphous gallium arsenide;Handbook of Thin Films;2002

2. Raman scattering analysis of disorder in heterogeneous (GaAs)1−x(SiC2:H)x films grown by metal-organic chemical vapour deposition;Thin Solid Films;1987-12

3. A.c. properties of polycrystalline GaAs and (GaAs)1−x(SiC2:H)x grown by metal-organic chemical vapour deposition;Thin Solid Films;1987-02