Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82−-Fe2+ based slurry-Reference-Cited by-同舟云学术

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Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82−-Fe2+ based slurry

Published:2017-06 Issue: Volume:110 Page:441-450
ISSN:0301-679X
Container-title:Tribology International
language:en
Short-container-title:Tribology International

Author:

Shi Xiaolei,Zou Chunli,Pan Guoshun,Gong Hua,Xu Li,Zhou Yan

Funder

National Key Basic Research Program of China

National Natural Science Foundation of China

International Science & Technology Cooperation Program of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanical Engineering,Mechanics of Materials

Reference36 articles.

1. Atomically smooth gallium nitride surfaces prepared by chemical etching with platinum catalyst in water;Mrata;J Electrochem Soc,2012

2. Wet ecthing of GaN, AlN, SiC: a review;Zhuang;Mater Sci Eng,2005

3. Chemical mechanical polishing of GaN;Hayashi;J. Electrochem.J Electrochem Soc,2008

4. Fabrication of GaN wafers for electronic and optoelectronic devices;Xu;Opt Mater,2003

5. Chemical mechanical polishing of freestanding GaN substrates;Huaiyue;J Semicond,2009

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