Chemical mechanical polishing of freestanding GaN substrates-Reference-Cited by-同舟云学术

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Chemical mechanical polishing of freestanding GaN substrates

Published:2009-02 Issue:2 Volume:30 Page:023003
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Huaiyue Yan,Xiangqian Xiu,Zhanhui Liu,Rong Zhang,Xuemei Hua,Zili Xie,Ping Han,Yi Shi,Youdou Zheng

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Chemical mechanical polishing (CMP) anisotropy in sapphire

2. Anisotropy of chemical mechanical polishing in silicon carbide substrates

3. Fabrication of GaN wafers for electronic and optoelectronic devices

4. Chemical polishing of bulk and epitaxial GaN

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate;Advanced Materials Interfaces;2024-03-04

2. Chemical and physical mechanisms of CMP of gallium nitride;Advances in Chemical Mechanical Planarization (CMP);2022

3. Synergetic effect of H2O2 and PTA on the microscratch and indentation of GaN wafer with electricity;Tribology International;2021-06

4. Surface Finishing of Single-Crystal SiC and GaN Wafers Using a Magnetic Tool in H2O2Solution;International Journal of Automation Technology;2019-03-05

5. Tribochemical polishing of bulk gallium nitride substrate;Precision Engineering;2019-03

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