Microstructure evolution of nanometer-sized hemispherical-grained Si deposited by RTCVD
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference5 articles.
1. A 1.28 μm2 bit-line shielded memory cell technology for 64 Mb DRAMs
2. Extended Abstract 21st Conference on Solid State Devices and Materials;Inoue,1989
3. Novel seeding method for the growth of polycrystalline Si films with hemispherical grains
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